Device Engineer/Sr. Device Engineer
 
Minimum Education: MS or PhD in EE, Physics, Applied Physics or Material Science.
 
Citizenship: Unrestricted   
 
Experience: > 5 years of experience in semiconductor industry preferred
 
Will relocation be provided: Yes

Salary range: Highly Competitive, Depends on the experience.
 
Job description:
 
This person will be responsible for the design and development required for next generation GaN power devices including Schottky diodes and FETs. Ideal candidate should have deep knowledge of the semiconductor device physics and have > 5 years hands on experience with device design, modeling and test.  
Experience with Si, SiC, GaN, GaAs-based devices such as Power diodes, MOSFETs, or LEDs is preferred.  

Ability to be a team player, good communication skills and capability to complete the tasks on time is essential.
 
 
The specific skills of the candidate that we looking for are:

• Familiarity with GaN device design, modeling and testing from either industry or university experience.
• Several years of direct experience working with high Voltage (>300V) semiconductor devices preferred.
• Knowledge of basic device physics and operation, standard modeling software and semiconductor test equipment.
• Basic knowledge of device fabrication techniques.
• Knowledge of the power device packaging.
• Experience working in a start-up environment is preferred, but not required

Qualified candidates should e-mail resumes to: info@veloxsemi.com or fax them to: 732 469 1973